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FQU10N20LTU MOSFET Transistor

The FQU10N20LTU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQU10N20LTU transistor as follows.

Circuit diagram symbol of the FQU10N20LTU transistor

FQU10N20LTU Transistor Specification

Transistor Code FQU10N20LTU
Transistor Type MOSFET
Control Channel Type N-Channel
Package I-PAK
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 7.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.36Ohm
Power Dissipation (Maximum) PD 51W
Drain-Source Capacitance 95pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 150nS
Gate-Threshold Voltage (Maximum) 2V
Total Gate Charge 13nC

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