FQT7N10 MOSFET Transistor

The FQT7N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQT7N10 transistor as follows.

FQT7N10 Transistor Specification

Transistor Code		FQT7N10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT223
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	1.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.35Ohm
Power Dissipation (Maximum)	PD	2W
Operating Junction Temperature (Maximum)		150°C

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