FQT5P10TF MOSFET Transistor

The FQT5P10TF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQT5P10TF transistor as follows.

FQT5P10TF Transistor Specification

Transistor Code		FQT5P10TF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-223
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.05Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		70pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		70nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		6.3nC

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