FQT2P25TF MOSFET Transistor

The FQT2P25TF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQT2P25TF transistor as follows.

FQT2P25TF Transistor Specification

Transistor Code		FQT2P25TF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-223
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	0.55A
Drain-Source On-State Resistance (Maximum)	RDS(on)	4Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		40pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		40nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		6.5nC

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