FQT1N80 MOSFET Transistor

The FQT1N80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQT1N80 transistor as follows.

FQT1N80 Transistor Specification

Transistor Code		FQT1N80
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT223
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	0.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	20Ohm
Power Dissipation (Maximum)	PD	2.1W
Operating Junction Temperature (Maximum)		150°C

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