FQT1N60C MOSFET Transistor

The FQT1N60C is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQT1N60C transistor as follows.

FQT1N60C Transistor Specification

Transistor Code		FQT1N60C
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT223
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	0.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	11.5Ohm
Power Dissipation (Maximum)	PD	2.1W
Operating Junction Temperature (Maximum)		150°C

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