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FQS4410TF MOSFET Transistor

The FQS4410TF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQS4410TF transistor as follows.

Circuit diagram symbol of the FQS4410TF transistor

FQS4410TF Transistor Specification

Transistor Code FQS4410TF
Transistor Type MOSFET
Control Channel Type N-Channel
Package 8-SOP
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0135Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 590pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 165nS
Gate-Threshold Voltage (Maximum) 2.5V
Total Gate Charge 21nC

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