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FQPF9P25YDTU MOSFET Transistor

The FQPF9P25YDTU is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQPF9P25YDTU transistor as follows.

Circuit diagram symbol of the FQPF9P25YDTU transistor

FQPF9P25YDTU Transistor Specification

Transistor Code FQPF9P25YDTU
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO-220F
Drain-Source Voltage (Maximum) VDS 250V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.62Ohm
Power Dissipation (Maximum) PD 50W
Drain-Source Capacitance 170pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 150nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 29nC

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