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FQPF9N90C MOSFET Transistor

The FQPF9N90C is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQPF9N90C transistor as follows.

Circuit diagram symbol of the FQPF9N90C transistor

FQPF9N90C Transistor Specification

Transistor Code FQPF9N90C
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220F
Drain-Source Voltage (Maximum) VDS 900V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 8A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.4Ohm
Power Dissipation (Maximum) PD 68W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 45nC

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