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FQPF9N25CYDTU MOSFET Transistor

The FQPF9N25CYDTU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQPF9N25CYDTU transistor as follows.

Circuit diagram symbol of the FQPF9N25CYDTU transistor

FQPF9N25CYDTU Transistor Specification

Transistor Code FQPF9N25CYDTU
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220F
Drain-Source Voltage (Maximum) VDS 250V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 8.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.43Ohm
Power Dissipation (Maximum) PD 38W
Drain-Source Capacitance 115pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 85nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 26.5nC

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