FQPF7P06 MOSFET Transistor

The FQPF7P06 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQPF7P06 transistor as follows.

FQPF7P06 Transistor Specification

Transistor Code		FQPF7P06
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	5.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.41Ohm
Power Dissipation (Maximum)	PD	24W
Drain-Source Capacitance		110pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		50nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		6.3nC

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