FQPF7N65CYDTU MOSFET Transistor

The FQPF7N65CYDTU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQPF7N65CYDTU transistor as follows.

FQPF7N65CYDTU Transistor Specification

Transistor Code		FQPF7N65CYDTU
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.4Ohm
Power Dissipation (Maximum)	PD	52W
Drain-Source Capacitance		100pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		50nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		28nC

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