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FQPF7N65C MOSFET Transistor

The FQPF7N65C is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQPF7N65C transistor as follows.

Circuit diagram symbol of the FQPF7N65C transistor

FQPF7N65C Transistor Specification

Transistor Code FQPF7N65C
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220F
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 7A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.4Ohm
Power Dissipation (Maximum) PD 52W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 28nC

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