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FQPF7N10 MOSFET Transistor

The FQPF7N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQPF7N10 transistor as follows.

Circuit diagram symbol of the FQPF7N10 transistor

FQPF7N10 Transistor Specification

Transistor Code FQPF7N10
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220F
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 5.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.35Ohm
Power Dissipation (Maximum) PD 23W
Drain-Source Capacitance 60pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 24nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 5.8nC

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