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FQPF630 MOSFET Transistor

The FQPF630 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQPF630 transistor as follows.

Circuit diagram symbol of the FQPF630 transistor

FQPF630 Transistor Specification

Transistor Code FQPF630
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220F
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 6.3A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.4Ohm
Power Dissipation (Maximum) PD 38W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 19nC

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