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FQPF5N60CYDTU MOSFET Transistor

The FQPF5N60CYDTU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQPF5N60CYDTU transistor as follows.

Circuit diagram symbol of the FQPF5N60CYDTU transistor

FQPF5N60CYDTU Transistor Specification

Transistor Code FQPF5N60CYDTU
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220F
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 4.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.5Ohm
Power Dissipation (Maximum) PD 33W
Drain-Source Capacitance 55pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 42nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 15nC

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