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FQPF5N20 MOSFET Transistor

The FQPF5N20 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQPF5N20 transistor as follows.

Circuit diagram symbol of the FQPF5N20 transistor

FQPF5N20 Transistor Specification

Transistor Code FQPF5N20
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220F
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 3.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.2Ohm
Power Dissipation (Maximum) PD 32W
Drain-Source Capacitance 40pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 55nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 6nC

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