FQPF55N10 MOSFET Transistor

The FQPF55N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQPF55N10 transistor as follows.

FQPF55N10 Transistor Specification

Transistor Code		FQPF55N10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	34.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.026Ohm
Power Dissipation (Maximum)	PD	60W
Drain-Source Capacitance		640pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		250nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		75nC

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