FQPF47P06YDTU MOSFET Transistor

The FQPF47P06YDTU is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQPF47P06YDTU transistor as follows.

FQPF47P06YDTU Transistor Specification

Transistor Code		FQPF47P06YDTU
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.026Ohm
Power Dissipation (Maximum)	PD	62W
Drain-Source Capacitance		1300pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		450nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		84nC

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