FQPF44N10 MOSFET Transistor

The FQPF44N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQPF44N10 transistor as follows.

FQPF44N10 Transistor Specification

Transistor Code		FQPF44N10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	27A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.039Ohm
Power Dissipation (Maximum)	PD	55W
Drain-Source Capacitance		425pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		190nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		48nC

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