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FQPF3N30 MOSFET Transistor

The FQPF3N30 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQPF3N30 transistor as follows.

Circuit diagram symbol of the FQPF3N30 transistor

FQPF3N30 Transistor Specification

Transistor Code FQPF3N30
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220F
Drain-Source Voltage (Maximum) VDS 300V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 1.95A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.2Ohm
Power Dissipation (Maximum) PD 20W
Drain-Source Capacitance 40pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 40nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 5.5nC

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