FQPF33N10L MOSFET Transistor

The FQPF33N10L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQPF33N10L transistor as follows.

FQPF33N10L Transistor Specification

Transistor Code		FQPF33N10L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.052Ohm
Power Dissipation (Maximum)	PD	41W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		30nC

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