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FQPF2N30 MOSFET Transistor

The FQPF2N30 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQPF2N30 transistor as follows.

Circuit diagram symbol of the FQPF2N30 transistor

FQPF2N30 Transistor Specification

Transistor Code FQPF2N30
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220F
Drain-Source Voltage (Maximum) VDS 300V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 1.34A
Drain-Source On-State Resistance (Maximum) RDS(on) 3.7Ohm
Power Dissipation (Maximum) PD 16W
Drain-Source Capacitance 25pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 26nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 3.7nC

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