FQPF27N25T MOSFET Transistor

The FQPF27N25T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQPF27N25T transistor as follows.

FQPF27N25T Transistor Specification

Transistor Code		FQPF27N25T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	14A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.11Ohm
Power Dissipation (Maximum)	PD	55W
Drain-Source Capacitance		360pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		270nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		50nC

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