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FQPF19N10L MOSFET Transistor

The FQPF19N10L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQPF19N10L transistor as follows.

Circuit diagram symbol of the FQPF19N10L transistor

FQPF19N10L Transistor Specification

Transistor Code FQPF19N10L
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220F
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 13.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.1Ohm
Power Dissipation (Maximum) PD 38W
Drain-Source Capacitance 160pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 410nS
Gate-Threshold Voltage (Maximum) 2V
Total Gate Charge 14nC

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