FQPF17P10 MOSFET Transistor

The FQPF17P10 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQPF17P10 transistor as follows.

FQPF17P10 Transistor Specification

Transistor Code		FQPF17P10
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.19Ohm
Power Dissipation (Maximum)	PD	41W
Drain-Source Capacitance		310pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		200nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		30nC

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