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FQPF13N10L MOSFET Transistor

The FQPF13N10L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQPF13N10L transistor as follows.

Circuit diagram symbol of the FQPF13N10L transistor

FQPF13N10L Transistor Specification

Transistor Code FQPF13N10L
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220F
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 8.7A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.18Ohm
Power Dissipation (Maximum) PD 30W
Drain-Source Capacitance 95pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 220nS
Gate-Threshold Voltage (Maximum) 2V
Total Gate Charge 8.7nC

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