FQPF11P06 MOSFET Transistor

The FQPF11P06 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQPF11P06 transistor as follows.

FQPF11P06 Transistor Specification

Transistor Code		FQPF11P06
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO220F
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	8.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.175Ohm
Power Dissipation (Maximum)	PD	30W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		13nC

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