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FQP9N30 MOSFET Transistor

The FQP9N30 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQP9N30 transistor as follows.

Circuit diagram symbol of the FQP9N30 transistor

FQP9N30 Transistor Specification

Transistor Code FQP9N30
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 300V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 9A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.45Ohm
Power Dissipation (Maximum) PD 98W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 17nC

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