FQP7P20 MOSFET Transistor

The FQP7P20 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQP7P20 transistor as follows.

FQP7P20 Transistor Specification

Transistor Code		FQP7P20
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.69Ohm
Power Dissipation (Maximum)	PD	90W
Drain-Source Capacitance		140pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		110nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		19nC

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