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FQP7N20L MOSFET Transistor

The FQP7N20L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQP7N20L transistor as follows.

Circuit diagram symbol of the FQP7N20L transistor

FQP7N20L Transistor Specification

Transistor Code FQP7N20L
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 6.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.75Ohm
Power Dissipation (Maximum) PD 63W
Drain-Source Capacitance 55pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 125nS
Gate-Threshold Voltage (Maximum) 2V
Total Gate Charge 6.8nC

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