FQP7N10 MOSFET Transistor

The FQP7N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQP7N10 transistor as follows.

FQP7N10 Transistor Specification

Transistor Code		FQP7N10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	7.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.35Ohm
Power Dissipation (Maximum)	PD	40W
Drain-Source Capacitance		60pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		24nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		5.8nC

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