FQP70N08 MOSFET Transistor

The FQP70N08 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQP70N08 transistor as follows.

FQP70N08 Transistor Specification

Transistor Code		FQP70N08
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	70A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.017Ohm
Power Dissipation (Maximum)	PD	155W
Drain-Source Capacitance		790pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		300nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		75nC

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