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FQP630TSTU MOSFET Transistor

The FQP630TSTU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQP630TSTU transistor as follows.

Circuit diagram symbol of the FQP630TSTU transistor

FQP630TSTU Transistor Specification

Transistor Code FQP630TSTU
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 9A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.4Ohm
Power Dissipation (Maximum) PD 78W
Drain-Source Capacitance 85pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 75nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 19nC

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