FQP4N60 MOSFET Transistor

The FQP4N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQP4N60 transistor as follows.

FQP4N60 Transistor Specification

Transistor Code		FQP4N60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.2Ohm
Power Dissipation (Maximum)	PD	106W
Drain-Source Capacitance		70pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		45nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		15nC

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