FQP4N20L MOSFET Transistor

The FQP4N20L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQP4N20L transistor as follows.

FQP4N20L Transistor Specification

Transistor Code		FQP4N20L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.35Ohm
Power Dissipation (Maximum)	PD	45W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		2V

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