FQP44N10F MOSFET Transistor

The FQP44N10F is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQP44N10F transistor as follows.

FQP44N10F Transistor Specification

Transistor Code		FQP44N10F
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	43.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.039Ohm
Power Dissipation (Maximum)	PD	146W
Drain-Source Capacitance		425pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		190nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		48nC

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