FQP33N10L MOSFET Transistor

The FQP33N10L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQP33N10L transistor as follows.

FQP33N10L Transistor Specification

Transistor Code		FQP33N10L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	33A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.052Ohm
Power Dissipation (Maximum)	PD	127W
Drain-Source Capacitance		305pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		470nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		30nC

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