FQP2N80 MOSFET Transistor

The FQP2N80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQP2N80 transistor as follows.

FQP2N80 Transistor Specification

Transistor Code		FQP2N80
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	2.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	6.3Ohm
Power Dissipation (Maximum)	PD	85W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		12nC

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