FQP27P06_SW82127 MOSFET Transistor

The FQP27P06_SW82127 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQP27P06_SW82127 transistor as follows.

FQP27P06_SW82127 Transistor Specification

Transistor Code		FQP27P06_SW82127
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	27A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.07Ohm
Power Dissipation (Maximum)	PD	120W
Drain-Source Capacitance		510pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		185nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		33nC

UXPython is not the creator or an official representative of the FQP27P06_SW82127 MOSFET transistor. You can download the official FQP27P06_SW82127 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in P-Channel MOSFET

PNMTO600V5 MOSFET Transistor HFP6N70U MOSFET Transistor VN66AD MOSFET Transistor TK30E06N1 MOSFET Transistor FS50UMJ-3 MOSFET Transistor SSF7008 MOSFET Transistor MDP1921TH MOSFET Transistor TSM2NB60CZ MOSFET Transistor STP20N20 MOSFET Transistor IPP09N03LA MOSFET Transistor RU1H80R MOSFET Transistor HFP10N80 MOSFET Transistor SIF80N060 MOSFET Transistor TMP10N60 MOSFET Transistor AOT14N50 MOSFET Transistor IPP096N03L MOSFET Transistor IPP65R190E6 MOSFET Transistor RU1H60R MOSFET Transistor IPP60R330P6 MOSFET Transistor IPP100N06S3L-03 MOSFET Transistor