FQP27P06_SW82127 MOSFET Transistor

The FQP27P06_SW82127 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQP27P06_SW82127 transistor as follows.

FQP27P06_SW82127 Transistor Specification

Transistor Code		FQP27P06_SW82127
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	27A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.07Ohm
Power Dissipation (Maximum)	PD	120W
Drain-Source Capacitance		510pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		185nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		33nC

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