FQP20N06TSTU MOSFET Transistor

The FQP20N06TSTU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQP20N06TSTU transistor as follows.

FQP20N06TSTU Transistor Specification

Transistor Code		FQP20N06TSTU
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.06Ohm
Power Dissipation (Maximum)	PD	53W
Drain-Source Capacitance		170pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		45nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		11.5nC

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