FQP1P50 MOSFET Transistor

The FQP1P50 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQP1P50 transistor as follows.

FQP1P50 Transistor Specification

Transistor Code		FQP1P50
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	10.5Ohm
Power Dissipation (Maximum)	PD	63W
Drain-Source Capacitance		40pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		25nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		11nC

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