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FQP1N50 MOSFET Transistor

The FQP1N50 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQP1N50 transistor as follows.

Circuit diagram symbol of the FQP1N50 transistor

FQP1N50 Transistor Specification

Transistor Code FQP1N50
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 1.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 9Ohm
Power Dissipation (Maximum) PD 40W
Drain-Source Capacitance 20pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 25nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 4nC

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