FQP19N10 MOSFET Transistor

The FQP19N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQP19N10 transistor as follows.

FQP19N10 Transistor Specification

Transistor Code		FQP19N10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	19A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.1Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		165pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		150nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		19nC

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