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FQP16N15 MOSFET Transistor

The FQP16N15 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQP16N15 transistor as follows.

Circuit diagram symbol of the FQP16N15 transistor

FQP16N15 Transistor Specification

Transistor Code FQP16N15
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 150V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 16.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.16Ohm
Power Dissipation (Maximum) PD 108W
Drain-Source Capacitance 145pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 115nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 23nC

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