FQP16N15 MOSFET Transistor

The FQP16N15 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQP16N15 transistor as follows.

FQP16N15 Transistor Specification

Transistor Code		FQP16N15
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	16.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.16Ohm
Power Dissipation (Maximum)	PD	108W
Drain-Source Capacitance		145pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		115nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		23nC

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