FQP12N60 MOSFET Transistor

The FQP12N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQP12N60 transistor as follows.

FQP12N60 Transistor Specification

Transistor Code		FQP12N60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.7Ohm
Power Dissipation (Maximum)	PD	180W
Drain-Source Capacitance		200pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		115nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		42nC

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