FQP10N50CF MOSFET Transistor

The FQP10N50CF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQP10N50CF transistor as follows.

FQP10N50CF Transistor Specification

Transistor Code		FQP10N50CF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.61Ohm
Power Dissipation (Maximum)	PD	143W
Drain-Source Capacitance		177pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		80nS

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