FQP10N20 MOSFET Transistor

The FQP10N20 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQP10N20 transistor as follows.

FQP10N20 Transistor Specification

Transistor Code		FQP10N20
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.36Ohm
Power Dissipation (Maximum)	PD	87W
Drain-Source Capacitance		95pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		90nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		13.5nC

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