FQN1N50CBU MOSFET Transistor

The FQN1N50CBU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQN1N50CBU transistor as follows.

FQN1N50CBU Transistor Specification

Transistor Code		FQN1N50CBU
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-92
Transistor SMD Code		1N50C
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	0.38A
Drain-Source On-State Resistance (Maximum)	RDS(on)	6Ohm
Power Dissipation (Maximum)	PD	0.89W
Drain-Source Capacitance		28pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		4.9nC

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