FQN1N50C MOSFET Transistor

The FQN1N50C is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQN1N50C transistor as follows.

FQN1N50C Transistor Specification

Transistor Code		FQN1N50C
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO92
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	0.38A
Drain-Source On-State Resistance (Maximum)	RDS(on)	6Ohm
Power Dissipation (Maximum)	PD	1.5W
Operating Junction Temperature (Maximum)		150°C

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